Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy

Manuscript received September 27, 1999. Manuscript revised October 20, 1999. † The authors are with NTT Cyber Space Laboratories, Musashino-shi, 180-8585 Japan. a) E-mail: [email protected] SUMMARY We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure consisted of undoped and Mg-doped GaN stacking layers deposited on Si-doped GaN and AlGaN layers. The electron-beam-induced-current signal and current injection characteristics of this diode structure were measured. There was a peak at the interface between the Mg-doped and undoped GaN in the electron-beam-induced-current signal. This shows successful growth of the p-n junction. Light emitting operation was achieved by currents injected through the conducting GaAs substrate of this diode at room temperature. We observed electroluminescence below the bandgap energy of cubic GaN with a peak at 2.6 eV. key words: cubic GaN, light emitting diode, Si-doping, Mg-doping, p-n junction